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ASG101 DC-3000 MHz SiGe HBT Amplifier Features *SiGe Technology *22 dB Gain at 900 MHz *+18 dBm P1dB *+31 dBm Output IP3 *3.0 dB Noise Figure *Single +4.5 V Supply *SOT-89 Surface Mount Package Description The ASG101 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package completing stringent DC and RF tests. Package Style: SOT-89 Specifications 1) Parameters Frequency Range Gain Input VSWR Output VSWR Output IP3 2) Units MHz dB dBm dB dBm mA V 4) Min. Typ. 250 - 2500 22 1.5 1.5 Max. Applications *CDMA, GSM, W-CDMA, PCS *PA Driver Amplifier *Gain Block 28 31 3.0 18 33 *CATV Amplifier *IF Amplifier Noise Figure Output P1dB Supply Current Supply Voltage Thermal Resistance, Rth 40 55 4.5 99.6 75 C/W 1) Measurement conditions are as follows: T = 25C, Vs = 4.5 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.243 W (VCC=4.5 V, IC=54 mA) with RF signal and a lead temperature of 90.3 C. Absolute Maximum Ratings Parameters Operating Case Temperature Storage Temperature Supply Voltage Input RF Power (continuous) Rating -40 to + 85C -40 to + 150C 6V +6 dB above Input P1dB Remarks More Information Website: www.asb.co.kr E-mail: sales@asb.co.kr Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB Inc., 4th Fl. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Application Note Application circuit for 900 MHz Application circuit for 2 GHz Ordering Information Part Number ASG101 EB-ASG101-900 EB-ASG101-2000 Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) Fully assembled evaluation kit (2000 MHz) 1/6 www.ASB.co.kr March. 2004 ASG101 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Input Ground Output Pin No. 1 2 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/6 www.ASB.co.kr March. 2004 ASG101 Application Circuit: 900 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic Vs=4.5V C4= C5= C6= 100 pF 1000 pF 1 F 900 MHz 22 dB -16 dB -19 dB 18 dBm 31 dBm 3.0 dB 4.5 V 55 mA R1=10 k RF IN C1=6 pF L1=22 nH RF OUT 50 5.5 mm L2=10nH C2=5.6 pF ASG101 50 4.5 mm C3=100pF Noise Figure Supply Voltage Current 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Gain vs. Temperature 28 Board Layout (FR4, 40x40 mm2, 0.8T) Frequency = 900MHz 26 24 22 20 18 16 -60 -40 -20 0 20 40 60 80 100 S-parameters 0 -5 -10 -15 -20 -25 -30 -35 600 700 800 900 1000 1100 1200 0 + 85 C + 25 C - 40 C S12 (dB) -5 -10 -15 -20 -25 -30 -35 600 700 800 900 1000 1100 1200 +85 C +25 C -40 C S11 (dB) Frequency (MHz) Frequency (MHz) 3/6 www.ASB.co.kr March. 2004 ASG101 35 0 -5 -10 -15 -20 20 -25 -30 -35 10 600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200 30 + 85 C + 25 C - 40 C + 85 C + 25 C - 40 C 25 15 Output P1 vs. Frequency 26 24 Output P1dB (dBm) 22 20 18 16 14 12 10 800 + 85 C + 25 C - 40 C 850 900 950 1000 Frequency (MHz) Output IP3 vs. Frequency (Pout per tone = 5 dBm) 50 Output IP3 vs. Tone Power 50 45 + 85 C + 25 C - 40 C 45 Frequency = 900 MHz + 85 C + 25 C - 40 C 40 40 35 35 30 30 25 25 800 820 840 860 880 900 920 940 2 3 4 5 6 7 8 9 4/6 www.ASB.co.kr March. 2004 ASG101 Application Circuit: 2000 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic 2000 MHz 15 dB -20 dB -17 dB 18 dBm 31 dBm 4.0 dB 4.5 V 55 mA L2=22nH RF IN C1=2 pF R1=10 k RF OUT L1=22 nH Vs=4.5V C4= C5= C6= 100 pF 1000 pF 1 F Noise Figure Supply Voltage Current 50 5.5 mm C2=1.5 pF ASG101 50 4.5 mm C3=100pF 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Gain vs. Temperature 20 Board Layout (FR4, 40x40 mm2, 0.8T) 18 Frequency = 2GHz 16 14 12 10 -60 -40 -20 0 20 40 60 80 100 S-parameters 0 -5 -10 -15 0 -5 -10 -15 + 85 C + 25 C - 40 C S11 (dB) -20 -25 -30 -35 -40 -45 1600 S12 (dB) 2400 -20 -25 -30 -35 -40 -45 1600 + 85 C + 25 C - 40 C 1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300 2400 Frequency (MHz) Frequency (MHz) 5/6 www.ASB.co.kr March. 2004 ASG101 26 24 22 20 18 16 14 12 10 8 1600 0 -5 + 85 C + 25 C - 40 C -10 -15 -20 -25 -30 -35 -40 -45 1600 + 85 C + 25 C - 40 C 1700 1800 1900 2000 2100 2200 2300 2400 1700 1800 1900 2000 2100 2200 2300 2400 Output P1 vs. Frequency 26 24 22 20 18 16 14 + 85 C + 25 C - 40 C 1800 1850 1900 1950 2000 2050 2100 Output IP3 vs. Frequency (Pout per tone = 5 dBm) 50 50 Output IP3 vs. Tone Power 45 + 85 C + 25 C - 40 C 45 + 85 C + 25 C - 40 C 40 40 35 35 30 30 25 1800 25 1850 1900 1950 2000 2050 2100 0 1 2 3 4 5 6 7 8 6/6 www.ASB.co.kr March. 2004 |
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